Subscribe free to our newsletters via your
. Space Industry and Business News .




CHIP TECH
Raytheon kicks off 15th year of GaN innovation
by Staff Writers
Tewksbury MA (SPX) Feb 21, 2014


File image.

Raytheon has embarked on its fifteenth year of pioneering the development and system integration of gallium nitride (GaN) technology. In 1999, Raytheon commenced research in GaN at the Raytheon Foundry in Andover, Mass.

Today, Raytheon remains at the forefront of GaN innovation, demonstrating the maturity of the technology which significantly extends the warfighter's reach into the battle space by increasing radar ranges, sensitivity and search capabilities.

"GaN technologies are transforming the way we address the evolving needs of our customers," said Paul Ferraro, vice president of Advanced Technology for Raytheon's Integrated Defense Systems business.

"Through partnerships with the Office of the Secretary of Defense (OSD) and DARPA, we are harnessing the revolutionary power, efficiency and performance improvements that GaN provides in programs today including AMDR and Next Generation Jammer. We are optimistic about its impact on future initiatives like 3DELRR and others."

Notable Milestones
+ In 2000, Raytheon fabricated its first GaN transistor, the building block for monolithic microwave integrated circuits (MMICs). A MMIC is a type of integrated circuit device that operates at microwave frequencies (300 MHz to 300 GHz). These devices typically perform functions such as microwave mixing, power amplification, low noise amplification and high frequency switching.

+ From 2005 - 2008, Raytheon worked closely with DARPA on the WBGS Phase 2 program, meeting all transistor level technical metrics. The high power density, high efficiency process that emerged during this time helped form the underpinning for our microwave GaN production processes today.

+ In 2009, Raytheon released GaN for production in its 4" Trusted compound semiconductor foundry.

+ Raytheon was honored by the Office of the Secretary of Defense (OSD) for successful completion of a Defense Production Act (DPA) Title III Gallium Nitride (GaN) production improvement program in 2013, culminating more than a decade of government and Raytheon investment in GaN RF (radio frequency) circuit technology.

+ Raytheon has demonstrated that the reliability of their GaN technology exceeded the requirement for insertion into production military systems. This maturation of GaN resulted in a Manufacturing Readiness Level (MRL) production capability of "8," the highest level obtained by any organization in the defense industry for this technology. MRL is a measure used by the OSD and many of the world's major companies to assess the maturity of manufacturing readiness.

+ Also through the OSD Title III program, GaN yield was improved by more than 300 percent and cost was reduced more than 75 percent for MMICs.

.


Related Links
Raytheon
Computer Chip Architecture, Technology and Manufacture
Nano Technology News From SpaceMart.com






Comment on this article via your Facebook, Yahoo, AOL, Hotmail login.

Share this article via these popular social media networks
del.icio.usdel.icio.us DiggDigg RedditReddit GoogleGoogle




Memory Foam Mattress Review
Newsletters :: SpaceDaily :: SpaceWar :: TerraDaily :: Energy Daily
XML Feeds :: Space News :: Earth News :: War News :: Solar Energy News





CHIP TECH
Stirring-up atomtronics in a quantum circuit
College Park, MD (SPX) Feb 18, 2014
Atomtronics is an emerging technology whereby physicists use ensembles of atoms to build analogs to electronic circuit elements. Modern electronics relies on utilizing the charge properties of the electron. Using lasers and magnetic fields, atomic systems can be engineered to have behavior analogous to that of electrons, making them an exciting platform for studying and generating alternatives t ... read more


CHIP TECH
Lagos gets on its bike with recycling 'loyalty' scheme

Gecko-inspired Adhesion: Self-cleaning and Reliable

Google shows prototype phone that creates 3-D maps of its surroundings

An essential step toward printing living tissues

CHIP TECH
ASC Signal Receives Multi-Antenna Contract for Kuwait Ministry of Information

New Wireless Tagging And Tracking Capability For Managing Sensitive Assets

US Marines Reach Milestone For New General Dynamics-built Aviation CCS

MUOS Satellite Tests Show Extensive Reach In Polar Communications Capability

CHIP TECH
Arianespace to launch OPTSAT 3000 and VENuS satellites

Lighter engines a headache for satellite launcher Ariane

New Russian Rocket Mock-Up Rolls Out to Launch Pad

ILS Proton Successfully Launches TURKSAT-4A for Turksat

CHIP TECH
Russia to deploy up to 7 Glonass ground stations outside of national territory in 2014

Northrop Grumman Awarded U.S. Military Contract for Navigation Systems

Galileo works, and works well

Sochi Olympic transport controlled from space using GLONASS satellite

CHIP TECH
ARES Aims to Provide More Front-line Units with Mission-tailored VTOL Capabilities

Test Flight of the Modernized Day Sensor Assembly on the AH-64E Apache Attack Helicopter

US Navy Tests Infrared Search and Track on Boeing Super Hornet

Why is the US spending so much on the F-35 fighter?

CHIP TECH
Raytheon kicks off 15th year of GaN innovation

Stirring-up atomtronics in a quantum circuit

New way to measure electron pair interactions

New Research Leads To Multifunctional Spintronic Smart Sensors

CHIP TECH
Sentinel-1 spreads its wings

NASA Satellites See Arctic Surface Darkening Faster

Sharp-Eyed Proba-V Works Around The Clock

NASA Data Find Some Hope for Water in Aral Sea Basin

CHIP TECH
Bulgaria chokes on air pollution fuelled by poverty

Air purifier rush as smog shrouds northern China

New Test Screens Wastewater Biosolids for Environmental Contaminants

New Bedford Harbor pollution prompts PCB-resistance in Atlantic killifish




The content herein, unless otherwise known to be public domain, are Copyright 1995-2014 - Space Media Network. All websites are published in Australia and are solely subject to Australian law and governed by Fair Use principals for news reporting and research purposes. AFP, UPI and IANS news wire stories are copyright Agence France-Presse, United Press International and Indo-Asia News Service. ESA news reports are copyright European Space Agency. All NASA sourced material is public domain. Additional copyrights may apply in whole or part to other bona fide parties. Advertising does not imply endorsement, agreement or approval of any opinions, statements or information provided by Space Media Network on any Web page published or hosted by Space Media Network. Privacy Statement All images and articles appearing on Space Media Network have been edited or digitally altered in some way. Any requests to remove copyright material will be acted upon in a timely and appropriate manner. Any attempt to extort money from Space Media Network will be ignored and reported to Australian Law Enforcement Agencies as a potential case of financial fraud involving the use of a telephonic carriage device or postal service.