by Staff Writers
Tewksbury MA (SPX) Apr 03, 2014
Raytheon has achieved another significant milestone for next generation Gallium Nitride (GaN) Radio Frequency (RF) semiconductor technology. Through the Defense Advanced Research Projects Agency (DARPA) Near Junction Thermal Transport effort under the Thermal Management Technologies program, Raytheon's team is replacing GaN's current substrate, Silicon Carbide, with diamond, a material with 3-5X higher thermal conductivity, to create GaN on diamond devices.
Raytheon has demonstrated that GaN on diamond technology enables a 3X increase in transistor power density over GaN on Silicon Carbide, overcoming a major barrier to unlocking the potential of GaN devices.
Data was obtained on a 10x125um (1.25mm) GaN on diamond HEMT, a device representing a unit cell for constructing Power Amplifier Monolithic Microwave Integrated Circuits (MMICs), the foundation of solid-state RF transmitters and Active Electronically Scanned Arrays.
This result builds on prior successes, including Raytheon's industry-first demonstration of GaN on diamond transistors in 2009, and GaN on diamond MMICs in 2011.
"Raytheon continues to be an innovator leading the development of GaN technology," said Joe Biondi, vice president of Advanced Technology for Raytheon's Integrated Defense Systems (IDS) business.
"We are now inserting GaN into DoD systems while remaining focused on continuing to increase performance of this revolutionary semiconductor to provide our warfighters with the most advanced sensing, communications and electronic warfare capabilities in the world."
GaN on diamond offers revolutionary performance improvement by reducing thermal resistance within the device and enabling GaN to be used at higher power densities, which will dramatically reduce the cost, size, weight and power of defense systems.
GaN is a core competency within Raytheon and an integral technology behind some of the company's major programs including Air and Missile Defense Radar and Next Generation Jammer. GaN's unique qualities allow radar, electronic warfare and communications systems to be smaller, more affordable and highly efficient.
Raytheon Company also recently announced that under the DARPA MTO Wide Bandgap Semiconductor Program, the company has systematically matured GaN from basic material to transistors, MMICs, Transmit/Receive (T/R) Modules and finally Transmit/Receive Integrated Multichannel Modules (TRIMMs), enabling game changing system performance for the DOD.
Radar at Raytheon
Computer Chip Architecture, Technology and Manufacture
Nano Technology News From SpaceMart.com
|The content herein, unless otherwise known to be public domain, are Copyright 1995-2014 - Space Media Network. All websites are published in Australia and are solely subject to Australian law and governed by Fair Use principals for news reporting and research purposes. AFP, UPI and IANS news wire stories are copyright Agence France-Presse, United Press International and Indo-Asia News Service. ESA news reports are copyright European Space Agency. All NASA sourced material is public domain. Additional copyrights may apply in whole or part to other bona fide parties. Advertising does not imply endorsement, agreement or approval of any opinions, statements or information provided by Space Media Network on any Web page published or hosted by Space Media Network. Privacy Statement All images and articles appearing on Space Media Network have been edited or digitally altered in some way. Any requests to remove copyright material will be acted upon in a timely and appropriate manner. Any attempt to extort money from Space Media Network will be ignored and reported to Australian Law Enforcement Agencies as a potential case of financial fraud involving the use of a telephonic carriage device or postal service.|