by Staff Writers
Raleigh NC (SPX) Mar 25, 2014
Researchers from North Carolina State University have developed a new processing technique that makes light emitting diodes (LEDs) brighter and more resilient by coating the semiconductor material gallium nitride (GaN) with a layer of phosphorus-derived acid.
"By coating polar GaN with a self-assembling layer of phosphonic groups, we were able to increase luminescence without increasing energy input," says Stewart Wilkins, a Ph.D. student at NC State and lead author of a paper describing the work. "The phosphonic groups also improve stability, making the GaN less likely to degrade in solution.
"Making the GaN more stable is important," Wilkins adds, "because that makes it more viable for use in biomedical applications, such as implantable sensors."
The researchers started with polar GaN, composed of alternating layers of gallium and nitrogen. To increase luminescence, they etched the surface of the material with phosphoric acid.
At the same time, they added phosphonic groups - organic molecules containing phosphorus - that self-assembled into a monolayer on the surface of the material. This layer further increased luminescence and improved the stability of the GaN by making it less likely to react chemically with its environment.
The paper, "In Situ Chemical Functionalization of Gallium Nitride with Phosphonic Acid Derivatives during Etching," is published online in the journal Langmuir. Senior author of the paper is Dr. Albena Ivanisevic, an associate professor of materials science and engineering at NC State and associate professor of the joint biomedical engineering program at NC State and the University of North Carolina at Chapel Hill. The paper was co-authored by Dr. Consuelo Arellano, a research associate professor of statistics at NC State; Dr. Tania Paskova, a research professor of electrical and computer engineering at NC State; and Michelle Greenough, an undergraduate at Wagner College.
North Carolina State University
Computer Chip Architecture, Technology and Manufacture
Nano Technology News From SpaceMart.com
|The content herein, unless otherwise known to be public domain, are Copyright 1995-2014 - Space Media Network. All websites are published in Australia and are solely subject to Australian law and governed by Fair Use principals for news reporting and research purposes. AFP, UPI and IANS news wire stories are copyright Agence France-Presse, United Press International and Indo-Asia News Service. ESA news reports are copyright European Space Agency. All NASA sourced material is public domain. Additional copyrights may apply in whole or part to other bona fide parties. Advertising does not imply endorsement, agreement or approval of any opinions, statements or information provided by Space Media Network on any Web page published or hosted by Space Media Network. Privacy Statement All images and articles appearing on Space Media Network have been edited or digitally altered in some way. Any requests to remove copyright material will be acted upon in a timely and appropriate manner. Any attempt to extort money from Space Media Network will be ignored and reported to Australian Law Enforcement Agencies as a potential case of financial fraud involving the use of a telephonic carriage device or postal service.|