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Northrop Grumman Develops New Gallium Arsenide E-Band High-Power Monolithic Microwave Integrated Circuits
by Staff Writers
Redondo Beach CA (SPX) Jun 19, 2013


Northrop Grumman has developed the APH667 (left) and the APH668, two new GaAs MMIC high-power amplifiers operating in the E-band frequency spectrum. They allow users to reach higher output power levels without combining multiple MMICs, a typical practice, simplifying product architecture and enhancing performance. (Northrop Grumman photos)

Northrop Grumman has developed new gallium arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) high-power amplifiers operating in the E-Band communication frequency spectrum. The APH667 and the APH668 are GaAs-based broadband, three-stage amplifier devices that operate from 81 - 86GHz and 71 - 76GHz respectively.

In 2004, Northrop Grumman became the first company to provide commercial availability of E-Band semiconductors. These new products are an example of Northrop's ongoing effort to push the boundaries of robust GaAs technology, said Frank Kropschot, general manager, Microelectronics Products and Services, Northrop Grumman Aerospace Systems.

"Customers typically combine several MMIC products in this frequency band to achieve higher output power. The APH667 and APH668 will allow them to dramatically reduce the number of components required to reach those goals, simplifying the product's architecture and enhancing the performance," he said.

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